1 mitsubishi semiconductor < dual-in-line package intelligent power module> PS21A79 transfer-mold type insulated type march 2011 PS21A79 main function and ratings z 3 phase inverter with n-side open emitter structure z 600v / 50a (cstbt) application z ac100 ~ 200vrms class, motor control integrated drive, protection and system control functions for p-side : drive circuit, high voltage high-speed level shifting, control supply under-voltage (uv) protection for n-side : drive circuit, control supply under-voltage prot ection (uv), short circuit protection (sc), fault signaling : corresponding to sc fault (n-side igbt), uv fault (n-side supply) temperature monitoring : analog output of lvic temperature input interface : 3, 5v line, schmi tt trigger receiver circuit (high active) ul approved : file no. e80276 maximum ratings (t j = 25c, unless otherwise noted) inverter part symbol parameter condition ratings unit v cc supply voltage applied between p-nu,nv,nw 450 v v cc(surge) supply voltage (surge) applied between p-nu,nv,nw 500 v v ces collector-emitter voltage 600 v i c each igbt collector current t c = 25c 50 a i cp each igbt collector current (peak) t c = 25c, less than 1ms 100 a p c collector dissipation t c = 25c, per 1 chip 142 w t j junction temperature -20~+150 c control (protection) part symbol parameter condition ratings unit v d control supply voltage applied between v p1 -v pc , v n1 -v nc 20 v v db control supply voltage applied between v ufb -v ufs , v vfb -v vfs , v wfb -v wfs 20 v v in input voltage applied between u p , v p , w p -v pc , u n , v n , w n -v nc -0.5~v d +0.5 v v fo fault output supply voltage applied between f o -v nc -0.5~v d +0.5 v i fo fault output current sink current at f o terminal 1 ma v sc current sensing input voltage applied between cin-v nc -0.5~v d +0.5 v total system symbol parameter condition ratings unit v cc(prot) self protection supply voltage limit (short circuit protection capability) v d = 13.5~16.5v, inverter part t j = 125c, non-repetitive, less than 2 s 400 v t c module case operation temperature (note 1) -20~+100 c t stg storage temperature -40~+125 c v iso isolation voltage 60hz, sinusoidal, ac 1mi nute, between connected all pins and heat-sink plate 2500 v rms note 1: tc measurement point is described in fig.1. thermal resistance limits symbol parameter condition min. typ. max. unit r th(j-c)q inverter igbt part (per 1/6 module) - - 0.88 c/w r th(j-c)f junction to case thermal resistance (note 2) inverter fwdi part (per 1/6 module) - - 1.78 c/w note 2: grease with good thermal conductivity and long-term endurance should be applied evenly with about +100 m~+200 m on the contacting surface of dipipm and heat-sink. the contacting thermal resistance betw een dipipm case and heat sink rth(c-f) is determined by the thic kness and the thermal conductivity of the applied grease. for reference, rth(c- f) is about 0.2c/w (per 1/6 module, grease thickness: 20 m, thermal conductivity: 1.0w/m?k).
2 mitsubishi semiconductor < dual-in-line package intelligent power module> PS21A79 transfer-mold type insulated type march 2011 fig. 1: t c measurement point electrical characteristics (t j = 25c, unless otherwise noted) inverter part limits symbol parameter condition min. typ. max. unit t j = 25c - 1.55 2.05 v ce(sat) collector-emitter saturation voltage v d =v db = 15v v in = 5v, i c = 50a t j = 125c - 1.65 2.10 v v ec fwdi forward voltage -i c = 50a, v in = 0v - 1.70 2.20 v t on 1.80 2.40 3.60 s t c(on) - 0.40 0.60 s t off - 3.00 4.20 s t c(off) - 0.60 1.20 s t rr switching times v cc = 300v, v d = v db = 15v i c = 50a, t j = 125c, v in = 0 ? 5 v inductive load (upper-lower arm) - 0.30 - s t j = 25c - - 1 i ces collector-emitter cut-off current v ce =v ces t j = 125c - - 10 ma control (protection) part limits symbol parameter condition min. typ. max. unit v d = 15v, v in = 0v - - 5.50 i d circuit current total of v p1 -v pc , v n1 -v nc v d = 15v, v in = 5v - - 5.50 v d = v db = 15v, v in = 0v - - 0.55 i db circuit current v ufb -v ufs , v vfb -v vfs, v wfb -v wfs v d = v db = 15v, v in = 5v - - 0.55 ma i sc short circuit trip level -20c tj 125c, rs= 40.2? (1%), not connecting outer shunt resistors to nu,nv,nw terminals (note 3) 85 - - a uv dbt trip level 10.0 - 12.0 v uv dbr p-side reset level 10.5 - 12.5 v uv dt trip level 10.3 - 12.5 v uv dr control supply under-voltage protection t j 125c n-side reset level 10.8 - 13.0 v v foh v sc = 0v, f o terminal pull-up to 5v by 10k 4.9 - - v v fol fault output voltage v sc = 1v, i fo = 1ma - - 0.95 v t fo fault output pulse width c fo =22nf (note 4) 1.6 2.4 - ms i in input current v in = 5v 0.7 1.0 1.5 ma v th(on) on threshold voltage 2.1 2.3 2.6 v v th(off) off threshold voltage applied between u p , v p , w p -v pc , u n , v n , w n -v nc 0.8 1.4 2.1 v v ot temperature output lvic temperature = 85 c (note 5) 3.57 3.63 3.69 v note 3 : short circuit protection can work for n-side igbts only. isc level can change by sense resistance. for details, please refer the application note for this dipipm or contact us. and in that case, it should be for sense resistor to be larger resistance than the value mentioned above. note 4 : fault signal is output when short circuit or n-side contro l supply under-voltage protective functions operate. the fault o utput pulse-width t fo depends on the capacitance value of c fo . (c fo (typ.) = t fo x (9.1 x 10 -6 ) [f]) note 5 : dipipm don't shutdown igbts and output fault signal automatically when temperature rises excessively. when temperature exc eeds the protective level that user defined, controller (mcu) should stop the dipipm. and this output might exceed 5v when te mperature rises excessively, so it is recommended for protection of control part like mcu to insert a clamp di between supply (e.g. 5v) for control part and this output. tempera ture of lvic vs. v ot output characteristics is described in fig.2 measurement point for tc
3 mitsubishi semiconductor < dual-in-line package intelligent power module> PS21A79 transfer-mold type insulated type march 2011 fig.2 temperature of lvic - v ot output characteristics 2.5 3.0 3.5 4.0 4.5 5.0 40 50 60 70 80 90 100 110 120 130 lvic temperature (c) vot output (v) 853c 6010c 11010c 4.26 3.63 mechanical characteristics and ratings limits parameter condition min. typ. max. unit mounting torque mounting screw : m4 recommended 1.18n ? m 0.98 1.18 1.47 n ? m terminal pulling strength load 19.6n eiaj- ed-4701 10 - - s terminal bending strength load 9.8n, 90deg. bend eiaj- ed-4701 2 - - times weight - 46 - g heat-sink flatness (note 6) -50 - 100 m note 6: measurement point of heat-sink flatness
4 mitsubishi semiconductor < dual-in-line package intelligent power module> PS21A79 transfer-mold type insulated type march 2011 recommended operation conditions limits symbol parameter condition min. typ. max. unit v cc supply voltage applied between p-nu, nv, nw 0 300 400 v v d control supply voltage applied between v p1 -v pc , v n1 -v nc 13.5 15.0 16.5 v v db control supply voltage applied between v ufb -v ufs , v vfb -v vfs , v wfb -v wfs 13.0 15.0 18.5 v v d , v db control supply variation -1 - +1 v/ s t dead arm shoot-through blocking time for each input signal, t c 100c 2.2 - - s f pwm pwm input frequency t c 100c, t j 125c - - 20 khz f pwm = 5khz - - 23.6 i o allowable r.m.s. current v cc = 300v, v d = 15v, p.f = 0.8, sinusoidal pwm t c 100c, t j 125c (note 7) f pwm = 15khz - - 13.8 arms pwin(on) (note 8) 1.1 - - i c 50a 3.0 - - pwin(off) minimum input pulse width 200 v cc 350v, 13.5 v d 16.5v, 13.0 v db 18.5v, -20c t c 100c, n line wiring inductance less than 10nh (note 9) 50 5 mitsubishi semiconductor < dual-in-line package intelligent power module> PS21A79 transfer-mold type insulated type march 2011 fig. 4 internal circuit ho ho ho in in in com com lvic hvic hvic hvic com u out v out w out v no cfo gnd fo w n v n u n v cc c fo cin nu w v u p v s v s v s v b v b v b v cc v cc v cc fo w n v n u n w p v p u p v nc v n1 v p1 v p1 v p1 v wfs v vfs v ufs v wfb v vfb v ufb igbt1 di1 igbt2 di2 igbt3 di3 igbt4 di4 igbt5 di5 igbt6 di6 nv nw v pc vsc cin v ot v ot
6 mitsubishi semiconductor < dual-in-line package intelligent power module> PS21A79 transfer-mold type insulated type march 2011 fig. 5 timing charts of th e dipipm protective functions [a] short-circuit protection (n-side only with the external sense resistor and rc filter) a1. normal operation: igbt on and outputs current. a2. short circuit current detection (sc trigger) (it is recommended to set rc time constant 1.5~2.0 s so that igbt shut down within 2.0 s when sc.) a3. all n-side igbt's gates are hard interrupted. a4. all n-side igbts turn off. a5. f o outputs with a fixed pulse width determined by the external capacitor c fo . a6. input = ?l?: igbt off a7. fo finishes output, but igbts don't turn on until inputting next on signal (l ? h). (igbt of each phase can return to normal state by inputting on signal to each phase.) a8. normal operation: igbt on and outputs current. [b] under-voltage protection (n-side, uv d ) b1. control supply voltage v d exceeds under voltage reset level (uv dr ), but igbt turns on when inputting next on signal (l ? h). (igbt of each phase can return to normal st ate by inputting on signal to each phase.) b2. normal operation: igbt on and outputs current. b3. v d level drops to under voltage trip level. (uv dt ). b4. all n-side igbts turn off in spite of control input condition. b5. fo outputs for the period determined by the capacitance c fo, but output is extended during v d keeps below uv dr . b6. v d level reaches uv dr . b7. normal operation: igbt on and outputs current. lower-side control input protection circuit state internal igbt gate output current ic sense voltage of the sense resistor error output fo sc trip current level a2 set reset sc reference voltage a1 a3 a6 a7 a4 a8 a5 delay by rc filtering uv dr reset set reset uv dt b1 b2 b3 b4 b6 b7 b5 control input protection circuit state control supply voltage v d output current ic error output fo
7 mitsubishi semiconductor < dual-in-line package intelligent power module> PS21A79 transfer-mold type insulated type march 2011 [c] under-voltage protection (p-side, uv db ) c1. control supply voltage v db rises. after the voltage reaches under voltage reset level uv dbr , igbt can turn on when inputting next on signal (l ? h). c2. normal operation: igbt on and outputs current. c3. v db level drops to under voltage trip level (uv dbt ). c4. igbt of corresponding phase only turns off in spite of control input signal level, but there is no f o signal output. c5. v db level reaches uv dbr . c6. normal operation: igbt on and outputs current. fig. 6 mcu i/o interface circuit note) design for input rc filter depends on the pwm control scheme us ed in the application and the wiring impedance of the printed ci rcuit board. the dipipm input signal interface integrates a 3.3k ? (min) pull-down resistor. therefore, when using rc filter, be careful to satisfy the turn-on threshold voltage requirement. fo output is open drain type. it should be pull ed up to the positive side of 5v or 15v power supply with the resistor that limi ts fo sink current i fo under 1ma. in the case of pulling up to 5v supply, over 5.1k ? is needed. (10k ??is recommended.) u p ,v p ,w p ,u n ,v n ,w n fo v nc (logic) dipipm mcu 10k 5v line 3.3 k ( min ) control input protection circuit state control supply voltage v db output current ic error output fo uv dbr reset set reset uv dbt keep high-level (no fault output) c1 c2 c3 c4 c5 c6
8 mitsubishi semiconductor < dual-in-line package intelligent power module> PS21A79 transfer-mold type insulated type march 2011 fig. 7 an example of application circuit note 1 :if control gnd is connected to power gnd by broad pattern, it may cause malfunction by power gnd fluctuation. it is recommen ded to connect control gnd and power gnd at only a point at which nu, nv, nw are connected to power gnd line. 2 :to prevent surge destruction, the wiring between the smoothing capacitor and the p,n1 terminals should be as short as possib le. generally inserting a 0.1 ~0.22 f snubber capacitor c3 between the p-n1 terminals is recommended. 3 :the time constant r1c4 of rc filter for preventing protecti on circuit malfunction should be selected in the range of 1.5 s~2 s. sc interrupting time might vary with the wiring pattern. tight tolerance, temp-compensated type is recommended for r1,c4. when r1 is too small, it will leads t o delay of protection. so r1 should be min. 10 times larger resistance than rs. (over 100 times is recommended.) 4 :all capacitors should be mounted as close to the terminals of the dipipm as possible. (c1: good temperature, frequency chara cteristic electrolytic type, and c2: 0.22 ~2.0 f, good temperature, frequency and dc bias char acteristic ceramic type are recommended.) 5 :it is recommended to insert a zener diode d1 (24v/1w) between each pair of control supply terminals to prevent surge destruc tion. 6 :to prevent erroneous sc protection, the wiring from v sc terminal to cin filter should be divided at the point d that is close to the terminal of sense resistor. and the wiring should be patterned as short as possible. 7 :for sense resistor, the variation within 1%(including temperature characteristics), low i nductance type is recommended. and the over 1/8w is recommended, but it is necessary to evaluate in your real system finally. 8 :to prevent erroneous operation, the wiring of a, b, c should be as short as possible. 9 :fo output is open drain type. it should be pulled up to the positive side of 5v or 15v power supply with the resistor that l imits fo sink current i fo under 1ma. in the case pull up to 5v supply, over r2=5.1k ? is needed. (10k ? ?? is recommended.) 10 :error signal output width (t fo ) can be set by the capacitor connected to c fo terminal. c fo (typ.) = t fo x (9.1 x 10 -6 ) (f) 11 :high voltage (v rrm =600v or more) and fast recovery type (trr=less than 10 0ns or less) diode d2 should be used in the bootstrap circuit. 12 :if high frequency noise superimposed to the control supply lin e, ic malfunction might happen and cause erroneous operation. to avoid such problem, voltage ripple of control supply line should meet dv/dt +/-1v/ s, vripple 2vp-p. 13 :input drive is high-active type. there is a 3.3k (min.) pull-down resistor integrated in the ic input circ uit. to prevent malfunction, the wiring of each input should be patterned as short as possible. when using rc filter r3 c5, it is necessary to confirm the input signal level to meet the turn-on and turn-off threshold voltage. thanks to hvic inside the module, direct coupling to mcu without any opto-c oupler or transformer isolation is possible . r3 c5 r3 c5 r3 c5 r3 c5 r3 c5 v pc (15) m mcu c2 15v v d c4 r1 sense resistor n1 c 5v a + u n (27) v n (28) w n (29) fo(26) v n1 (21) v nc (22) p(40) u(39) w(37) nu(36) lvic v(38) cin(24) nv(35) nw(34) igbt1 igbt2 igbt3 igbt4 igbt5 igbt6 di1 di2 di3 di4 di5 di6 c1 v ot (23) w p (13) v wfb (16) v wfs (18) c1 d1 c2 + v p1 (14) c2 d2 v p (7) hvic v vfs (12) c1 d1 c2 + v p1 (9) c2 d2 u p (1) hvic v ufb (4) v ufs (6) c1 d1 c2 + v p1 (3) c2 d2 c fo (25) d1 c3 v no v sc (19) + r2 rs d b r3 c5 v vfb (10) hvic
9 mitsubishi semiconductor < dual-in-line package intelligent power module> PS21A79 transfer-mold type insulated type march 2011 fig. 8 package outlines dimensions in mm
10 mitsubishi semiconductor < dual-in-line package intelligent power module> PS21A79 transfer-mold type insulated type march 2011 keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but these are always the pos sibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measur es such as (1) placement of substi tutive, auxiliary circuits, (2) use of non-flammable material or (3) prevention against any malfunction or mishap. notice regarding these materials these materials are intended as reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electric corporation or third party. mitsubishi electric corporation assume s no responsibility for any damage, or infringement of any third-party?s rights, originating in the use of any product data, diagr ams, chart, programs, algorithms, or circuit application examples contained in these materials. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of public ation of these materials, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for the latest product information bef ore purchasing a product listed herein. the information described here may contain inaccuracies or typographica l errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http ://www.mitsubishichips.com) when using any or all of the information contained in t hese materials, including produ ct data, diagrams, charts, programs and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and pr oducts. mitsubishi electric corporation assumes no responsibility for any damage, liab ility or other loss resulting from the information c ontained herein. mitsubishi electric corporation semico nductors are not designed or manufact ured for use in a device or system that is used under circumstances in which human life is po tentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor prod uct distributor when considering the use of a product contained herein for any specific purposes, such as appar atus or systems for transporta tion, vehicular, medical, aerospace, nuclear, or undersea repeater use. the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in whole or in part these materials. if these products or technologies are subject to the japa nese export control restrict ions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the ex port control laws and regulations of japan and/or the country of destination is prohibited. please contact mitsubishi electric corporation or an author ized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein. dipipm and cstbt are registered trademarks of mitsubishi electric corporation.
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